氧化锌半导体材料的性能研究与制备进展.pdfVIP

第 38卷第 5期 无机盐工业 2006年 5月 INORGAN IC CHEM ICALS INDUSTRY 11 , , ( , 7 10055) : , , , : ; ; ; : TQ132. 4 : A : 1006- 4990( 2006) 05- 0011- 03 P rogress in properties research and preparing technology of ZnO sem icondu ctor m aterials L iu Yu, Xu Q mi ing, L iu Shan (School of M aterialScience and Eng ineering, X ican University of A rchitecture Technology, X ican 710055, China) A bstrac t: Zn i ox ide has a w ide range of te hnologi al app li ations as sem i ondu tive m aterial in lud ing photoele - tron, sense organ, tansparent ondu tor and others. This paper on entrates on the properties and appli ations of ZnO in sen- s itive materials, p iezoele tri m aterials and ondu tive film, also on te hniques wh i h the th in film w as prepared by. Contras- ting w ith m onolith m aterials, the ZnO th in film an m eet the dem ands of mole tron and possesses a great developm ent future and resear h value. The ZnO thin film an be doped w ith a variety of ions and prepared w ith m any te hniques to exh ibit dif- ferent properties. K ey w ord s: ZnO; sem i ondu tivem aterial; th in film; opti al and ele tri al property 1 ZnO ZnO ( A = 10 ~ 111 100) ZnO , ZnO [ 1- 2] ( 22~ 26 000 V ), I - , ZnO , I - I , , ( - , ), [ 3] 1. 2 , I - ( [ 3]