Use different Si delta-dopedGaN barrier layer of.pptVIP

Use different Si delta-doped GaN barrier layer of InGaN-GaN quantum well LED J.K. Lee Outline Introduction Experiment Results and Discussion Conclusion References Si delta doping in a GaN barrier layer of InGaN GaN multiquantum Min-Ki Kwon, Il-Kyu Park, Sung-Ho Baek, Ja-Yeon Kim, and Seong-Ju Park Introduction The effect of Si delta doping of the GaN barrier on the optical and electrical properties of an InGaN/GaN ultraviolet light-emitting diode UV. The photoluminescence (PL) dintensity of MQW and the output power were greatly improved as the result of introducing a Si delta-doping layer in GaN barrier of an InGaN/GaN MQW. Experiment Results and Discussion Results and Discussion Results and Discussion Conclusion The PL intensity of a MQW and the output power of the UV LED were dramatically increased when a Si delta-doped barrier layer was used. These enhancements are due to the efficient injection of electrons from the Si delta-doped GaN barrier layer into the InGaN quantum well layer and an increase in the hole confinement in the valence-band region. Optical properties of a Si delta-doped InGaN/GaN quantum well with ultraviolet emission Min-Ki Kwon, Il-Kyu Park, Ja-Yeon Kim, Jeom-Oh Kim, Seong-Bum Seo , Seong-Ju Park. Introduction The effect of the position of the Si delta-doped layer within a GaN barrier layer on the optical properties of a InGaN-GaN single quantum well with an emission wavelength of 374 nm. Experiment Results and Discussion Results and Discussion Results and Discussion Results and Discussion 壓電場屏蔽效應 因晶格不匹配所產生的應力， 使量子井中有壓電場的產生，成長InGaN-GaN薄膜的過程中，銦含量愈高，產生的壓電場就愈大。 壓電場造成能帶的傾斜，能隙受到量子侷限史塔克效應（QCSE），會有紅位移的現象。 為何能帶彎曲會減少是因為，在溫度90K 以後，溫度的升高，被鍵結住的載子受到熱效應作用而活性化為自由載子，這些自由載子對壓電場產生一個部份屏蔽作用。能帶結構所受到的壓電場變小，能帶傾斜也隨之變小。 本來受到量子侷限史塔克效應所造成的紅位移偏移量也就變小，使得量子井訊號的峰值能量會有藍位移的現象發生。 Results and Discussion Results and Discussion Results and Discussion Conclusion The effect of the position of the Si delta-doped layer within a GaN barrier of InGaN/GaN SQW wi