积累模式p沟道SOI基围栅FinFET驱动电流的研究.pdf

Vol. 32,No. 9 JournalofSemiconductors September2011 Drivecurrentof accumulation-mode p-channelSOI-basedwrap-gatedFin-FETs ZhangYanbo(张严波) ,Du Yandong(杜彦东) ,Xiong Ying(熊莹) ,YangXiang(杨香) , Han Weihua(韩伟华) ,and YangFuhua(杨富华) EngineeringResearch Center for Semiconductor Integration Technology,InstituteofSemiconductors, Chinese Academy of Sciences, Beijing 100083, China Departmentof Electronic Engineering, TsinghuaUniversity,Beijing 100084,China StateKey Laboratory for Superlattices and Microstructures, Beijing 100083,China Abstract: Comparisons are performed to study the drive current of accumulation-mode (AM) p-channel wrap- gated Fin-FETs. The drive current of the AM p-channel FET is 15%–26% larger than that of the inversion-mode (IM)p-channelFETwiththesamewrap-gatedfinchannel,becauseofthebodycurrentcomponentintheAMFET, whichbecomeslessdominativeasthegateoverdrivebecomeslarger.ThedrivecurrentsoftheAMp-channelwrap- gatedFin-FETsare50%largerthanthoseoftheAMp-channelplanarFETs,whicharisesfromeffectiveconducting surface broadening and volume accumulation in the AM wrap-gated Fin-FETs. The effective conducting surface broadening is due to wrap-gate-induced multi-surface conduction, while the volume accumulation, namely the majority carrier concentration anywhere in the fin cross section exceeding the fin doping density, is due to the couplingofelectricfieldsfromdifferentpartsofthewrapgate.Moreover,forAMp-channelwrap-gatedFin-FETs, thecurrentinchannelalong 110 islargerthanthatinchannelalong 100,whicharisesfr