Development of high efficiency GaNbased multiquantumwell lightemitting diodes and applications.pdfVIP

IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 2, MARCH/APRIL 2002 271 Development of High Efficiency GaN-Based Multiquantum-Well Light-Emitting Diodes and Their Applications Masayoshi Koike, Naoki Shibata, Hisaki Kato, and Yuji Takahashi Invited Paper Abstract—Highly efficient GaInN–GaN multiple quantum-well (MQW) light-emitting diodes (LEDs) were successfully developed by the low-temperature AlN buffer layer method for metal–or- ganic vapor phase epitaxy (MOVPE). The light-emitting layer of the GaInN–GaN MQW drastically enhances the performance of GaN-based LEDs in terms of the efficiency and spectrums. Flip-chip (FC) type MQW LEDs have been newly developed to increase efficiency in extracting light from the GaN-based crystal to the outside. The luminous intensities of FC type blue and green LEDs are typically 6 and 14 cd, respectively, at 20 mA. The output power of the FC-type LEDs was 14 mW at 20 mA, which was ap- proximately two times higher than that of the conventional face-up type blue LEDs. The external quantum efficiency of blue FC-type LEDs was as high as 20% at 20 mA. New multicolor package was developed using these high performance nitride-based LEDs and commercial AlGaInP-based red LEDs, the color range of which is the largest among other flat panel display devices. Index Terms—Blue LED, gallium nitride (GaN), green LED, Fig. 1. Improvement of GaInN-based LEDs. light-emitting diode (LED), metal–organic vapor phase epitaxy (MOVPE), multiquantum well (MQW). In 1994, candela-class GaIn