NH3-Ar气氛下制备的Zn3N2薄膜的结构和光学性能.pdf

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NH3-Ar气氛下制备的Zn3N2薄膜的结构和光学性能.pdf

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10.3788/gzx0695 StructuralandOpticalPropertiesofZn3N2FilmsPreparedby MagnetronSputteringinNH3-ArMixtureGases LIHong-guang SchoolofinformationandElectricalEngineering,LudongUniversity,Yantai,Shandong264025,China Abstract:TheZn3N2isakindofwidebandgapsemiconductoranditcanbeconvertedintop-type ZnO:Nafteroxidationattemperatureshigherthan400℃ whichhassignificantpotentialfor electronicandoptoelectronicapplications. TheZn3N2filmswerepreparedbyRFmagnetron sputteringametalliczinctargetinNH3-Armixturegasesonglasssubstrateatroomtemperature. Theopticaltransmission,opticalabsorption,structuralproperty,chemicalbondingstates, photoluminescenceweremeasuredusingadoublebeamspectrophotometer,X-raydiffractometer (XRD),X-rayPhotoelectronSpectroscopy(XPS),fluorescencespectrometer. Theeffectsof NH3ratioonthestructuralandopticalpropertiesofthefilmswereexamined. XRDanalysis indicatesthatthefilmsarepolycrystallineandhaveapreferredorientationof(321). The intensityoftheZn3N2(321)peakincreaseswiththeNH3ratio.ThefilmsprcparedwiththeNH3 ratiosof5％～10％ havelowtransmissionvalues,thetransparencyofthefilmsgetbetterwith theincreaseoftheNH3ratio.TheZn3N2filmshaveanindirectbandgap,theopticalbandgap increasesfrom2.33to2.70eVwhentheNH3ratiovariesfrom5％ to25％.XPSanalysisshows thattheZn3N2filmiseasilyhydrolyzedbyairmoisture.Photoluminescencespectrumshowstwo emissionpeaks,whicharelocatedat437nmand459nm. Zincnitridefilms;Magnetronsputtering;NH3ratios;Photoluminescence O484.4+1 A 1004-4213(2012)06-0695-5 Foundationitem:TheNationalNaturalScienceFoundationofChina(No,theNaturalScienceFoundationofShandong Province,China(No.2009ZRB01702)andShandongProvinceHigherEducationalScienceandTechnologyProgram(No.J10LA08) LIHong-guang(1964-),male,M.S.degree,associateprofessor,mainlyfocusesoncondensedoptics