《Ultraviolet light-emitting diodes based on group three nitrides》.pdf

REVIEW ARTICLE Ultraviolet light-emitting diodes based on group three nitrides Light-emitting diodes with emission wavelengths less than 400 nm have been developed using the AlInGaN material system. For devices operating at shorter wavelengths, alloy compositions with a greater aluminium content are required. The material properties of these materials lie on the border between conventional semiconductors and insulators, which adds a degree of complexity to the development of efficient light-emitting devices. A number of technical developments have enabled the fabrication of LEDs based on group three nitrides (III-nitrides) that emit in the UV part of the spectrum, providing useful tools for a wealth of applications in optoelectronic systems. Asif KhAn, KrishnAn BAlAKrishnAn light-emission devices are presented, and the methods that have been used to overcome them are discussed. In addition, we also present And Tom KATonA an overview of key areas of future research that have the potential to Department of Electrical Engineering, University of South Carolina, Columbia, enable the next generation of UV-emitting devices. South Carolina 29208, USA The electromagnetic spectrum is divided into regions based e-mail: asif@ on the wavelength of the radiation, with the UV region defined as the wavelength range from 10 nm to 400 nm. The UV spectrum is Research and development on III-nitride semiconductors gained furt