《Present status of amorphous In-Ga-Zn-O thin-film transistors》.pdfVIP

Home Search Collections Journals About Contact us My IOPscience Present status of amorphous In–Ga–Zn–O thin-film transistors This content has been downloaded from IOPscience. Please scroll down to see the full text. 2010 Sci. Technol. Adv. Mater. 11 044305 (/1468-6996/11/4/044305) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 6 This content was downloaded on 23/11/2013 at 01:41 Please note that terms and conditions apply. IOP PUBLISHING SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS Sci. Technol. Adv. Mater. 11 (2010) 044305 (23pp) doi:10.1088/1468-6996/11/4/044305 TOPICAL REVIEW Present status of amorphous In–Ga–Zn–O thin-film transistors 1 2 1,2 Toshio Kamiya , Kenji Nomura and Hideo Hosono 1 Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan 2 Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan E-mail: kamiya.t.aa@m.titech.ac.jp Received 28 April 2010 Accepted for publication 2 July 2010 Published 10 September 2010 Online at /STAM/11/044305 Abstract The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot b