《Simulation and analysis of Si deposition in turbulent CVD reactors》.pdf

Vo1．35，No．8 JournaIofSemiconductors Auqust2014 SimulationandanalysisofSidepositioninturbulentCVD reactors WeiJiaxing(魏家星)，XuRui(徐睿)，YuYanfei(：~燕飞)，HouJinliang(侯金亮)， andLiChangfeng(李昌烽)十 SchoolofEnergyandPowerEngineering，JiangsuUniversity,Zhenjiang212013，China Abstract：Numericalsimulation，basedonsimplereactionmodelsthatmanifestthedepositionqualityofsilicon from silane，wasunde~akentoinvestigatethehorizontalreactor,withlongitudinalandtransversa1aspectratiosof 10and4，respectively．TheeffectsofRayleigh(Ra)andReynolds(Re)numbersontheSidepositionrateinthese turbulent—typereactorsarediscussed．Theresultsshow thatthetime—averageddepositionrateisfairlyuniofrm and fast．althoughtheinstantaneousdepositionisnon．uniforlTlintheseturbulentreactors．Inaddition．theincreaseof theRenumberwithinacertainrangecancompensateforthepath1OSSofthereactantandobviouslyenhancethe downstream depositionrate，butdeterioratethetransversedistributionofthedeposition． Keywords：chemicalvapordeposition；turbulence；depositionrate；naturalconvection DoI：10．1088／1674—4926／35／8／083002 EEACC：0520；0520F 1．IntrOductiOn turbulencecanenhancetheheattransfer-Santeneta1．t6Jpro— posedtouseturbulentverticalCVD reactorsasadeposition Chemicalvapordeposition(CVD、isthecriticalprocess model，showingthatthedepositionrateandtheuniformityare ofmakingcompoundsemiconductoropticaldevices．includ— farbetterinalargepartofthesusceptorthaninalaminarstate． ingblueLED．high—powerlasers．solarcellsandsoon．This In2011．Tianeta1．【obtainedasimilarconclusionthatturbu— technologyusesorganiccompoundsOfII．IIIgroupelements lentCVD cangetabet