Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation》.pdf

Nuclear Instruments and Methods in Physics Research A 767 (2014) 347–352 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: /locate/nima Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation R. Pagano a, S. Lombardo a,n, F. Palumbo b, D. Sanfilippo c, G. Valvo c, G. Fallica c, S. Libertino a a Istituto per la Microelettronica e Microsistemi, Zona Industriale, Ottava Strada, 5, 95121, Catania, Italy b Department of Materials Science and Engineering, Technion – Israel Institute of Technology, 32000, Haifa, Israel c STMicroelectronics, Stradale Primosole, 50, 95121, Catania, Italy a r t i c l e i n f o a b s t r a c t Article history: Radiation damage in silicon photomultipliers (SiPM) caused by exposure to 60Co γ-rays is experimentally Received 21 May 2014 evaluated and discussed. SiPM devices were irradiated to doses up to 9.4 kGy. Dark current, dark count Received in revised form rate, gain, single photon counting capability, and cross-talk probability among SiPM pixels are evaluated 1 August 2014 as a function of irradiation dose. Accepted 20 August 2014 2014 Elsevier B.V. All rights reserved. Available online 6 September 2014 Keywords: Silicon photomultiplier Radiation damage Radiation hardness Gamma rays 1. Introduction