Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal-semiconductor field effect transistor》.pdfVIP

Materials Science in Semiconductor Processing 26 (2014) 506–511 Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: /locate/mssp Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal–semiconductor field effect transistor Ali A. Orouji n, Hadi Shahnazarisani, Mohammad K. Anvarifard Electrical and Computer Engineering Department, S