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Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy sourcedrain stressors》.pdfVIP

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Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy sourcedrain stressors》.pdf

    Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy sourcedrain stressors》.pdf

    Microelectronic Engineering 138 (2015) 12–16 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.else /locate/mee Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors Chia-Feng Lee, Ren-Yu He, Kuan-Ting Chen, Shu-Ying Cheng, Shu-Tong Chang ⇑ Department of Electri

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