Lecture15onOctober52015.pptVIP

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Lecture15onOctober52015.ppt

Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Microelectronic Circuit Design, 3E McGraw-Hill Chapter 13 Small-Signal Modeling and Linear Amplification Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock Microelectronic Circuit Design, 3E McGraw-Hill BJT Amplifier BJT is biased in active region by dc voltage source VBE. Q-point is set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 mA. Total base-emitter voltage is: Collector-emitter voltage is: This is the load line equation. Microelectronic Circuit Design, 3E McGraw-Hill BJT Amplifier (cont.) 8 mV peak change in vBE gives 5 mA change in iB and 0.5 mA change in iC. 0.5 mA change in iC produces a 1.65 V change in vCE . If changes in operating currents and voltages are small enough, then iC and vCE waveforms are undistorted replicas of input signal. Small voltage change at base causes large voltage change at collector. Voltage gain is given by: Minus sign indicates 1800 phase shift between input and output signals. Microelectronic Circuit Design, 3E McGraw-Hill MOSFET Amplifier MOSFET is biased in active region by dc voltage source VGS. Q-point is set at (ID, VDS) = (1.56 mA, 4.8 V) with VGS = 3.5 V. Total gate-source voltage is: 1 V p-p change in vGS gives 1.25 mA p-p change in iD and 4 V p-p change in vDS. Microelectronic Circuit Design, 3E McGraw-Hill Coupling and Bypass Capacitors AC coupling through capacitors is used to inject ac input signal and extract output

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