光电技术5.pptVIP

Chapter 5 Photoemissive Detectors  第五章 光电发射探测器 §5.1 Structure and principle 结构和原理 §5.2 Components 组成 §5.3 Main parameters 主要参量 §5.4 Equivalent circuit 微变等效电路 §5.5 Voltage-divider circuit 分压电路 §5.6 Applications 应用 §5.1 Structure and principle 结构和原理 Photomultiplier tube (PMT) Extremely high sensitivity /wiki /en/support/technical-notes.php Tube socket /en/support/technical-notes.php Separate PMT, Voltage-dropping circuit, Power supply. /en/support/technical-notes.php PMT + Voltage-dropping circuit + Power supply. /en/support/technical-notes.php /en/support/technical-notes.php /en/support/technical-notes.php /articles/photomultipliers.html §5.2 Components 组成 1. Window Side window 侧窗 Side-on Type /en/support/technical-notes.php End window 端窗 Head-on Type Short wavelength limit /en/support/technical-notes.php .hk/imgcat/imghp?hl=zh-CN SILICA石英玻璃， BOROSILICATE硼硅玻璃 MgF2 Magnesium fluoride /assets/applications/ETD/PMT_4-15e.pdf 2. Photocathode Reflection mode (opaque photocathode) /en/support/technical-notes.php Transmission mode /en/support/technical-notes.php 1) Ag-O-Cs (visiable-near infrared) 2) GaAs, GaAsP (gallium arsenide phosphied), InGaAs, (around visiable) 3) Sb-Cs, Bialkali ( Sb-Rb-Cs , Sb-K-Cs), High temperature bialkali or low noise bialkali (Na-K-Sb ), Multialkali ( Na-K-Sb-Cs) (around visiable) 4) Cs-Te , Cs-I (UV) 5 ) InP/lnGaAsP (Cs), InP/lnGaAs(Cs) (NEA, p-n junction, extending to 1400 nm or even 1700nm, -60 ℃ to -80 ℃) /en/support/technical-notes.php /en/support/technical-notes.php 3. Dynode 倍增极，打拿极 ? : Secondary electron emission ratio N2: Number of secondary electrons N1: Number of incoming electrons /en/support/technical-notes.php 1) Circular-cage type 鼠笼式 2) Box and grid type 盒栅式 3) Linear focused type 直线聚焦式 4) Venetian blind type 百叶窗式 5) Mesh type 近贴栅网式 6) Microchannel plate ( MCP ) 微通道板式 7) Metal Channel dynode 金属通