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SECTION: HYDROGEN IN MATERIALS Table of Contents SECTION: HYDROGEN IN MATERIALS CHAPTER: DIFFUSION CHARACTERISTICS of HYDROGEN IMPLANTED in Si Fig1. Depth distributions as a function of annealing temperature for (100) Si implanted with 1x1016 cm-2 250-keV 1H ions (-327) Fig2. Depth distributions as a function of annealing temperature for (111) Si implanted with 1x1016 cm-2 250-keV 1H ions (-403) Fig3. Depth distributions as a function of annealing temperature for (100) Si implanted with 3x1016 cm-2 250-keV 1H ions (-434) Fig4. Depth distributions as a function of annealing temperature for (100) Si implanted with 1.0x1016 cm-2 120-keV 2H ions (-340) CHAPTER: DIFFUSION CHARACTERISTICS of HYDROGEN IMPLANTED in III-V SEMICONDUCTORS Fig1. Depth profiles for 150-keV 1H and 2H implanted at 1.0x1016 cm-2 into GaAs Fig2. Depth profiles for 250-keV 1H and 2H implanted at 1.0x1016 cm-2 into GaAs Fig3. Depth profiles for 300-keV 1H and 2H implanted at 5x1016 cm-2 into GaAs Fig4. Depth profiles for 333-keV 1H implanted at 1.0x1016 cm-2 into Zn-doped GaAs and annealed for 20 min at the temperatures indicated Fig5. Depth profiles for 300-keV H implanted at 1.0x1016 cm-2 into Zn-doped GaAs and annealed for 20 min at the temperatures indicated Fig6. SIMS profile for the 400°C anneal of Fig. 5 Fig7. Depth profiles for 300-keV 2H implanted at 5x1015 cm-2 into Zn-doped GaAs and annealed for 20 min at the temperatures indicated Fig8. Depth profiles for 300-keV 2H implanted at 5x1015 cm-2 into Zn-doped GaAs and annealed for 20 min at the temperatures indicated Fig9a. SIMS profiles for the anneals of Fig. 7 Fig9b. SIMS profiles for the anneals of Fig. 8 Fig10. Depth profiles for 300-keV 1H implanted at 1.0x1016 cm-2 into Si-doped GaAs and annealed for 20 min at the temperatures indicated Fig11. Depth profiles for 350-keV 2H implanted at 5x1015 cm-2 into Si-doped GaAs and annealed for 20 min at the temperatures indicated Fig12. SIMS profiles for three of the anneals of Fig. 11 Fi