Roleofannealingtemperatureonmicrostructuraland.PDFVIP

J Mater Sci: Mater Electron DOI 10.1007/s10854-012-0768-8 Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering M. Gulen • G. Yildirim • S. Bal • A. Varilci • I. Belenli • M. Oz Received: 21 March 2012 / Accepted: 18 May 2012 Springer Science+Business Media, LLC 2012 Abstract This study probes the effect of annealing tem- annealed at 400 C) to 93 % (for the film annealed at perature on electrical, optical and microstructural proper- 100 C). The refractive index, packing density, porosity ties of indium tin oxide (ITO) films deposited onto soda and optical band gap of the ITO thin films are also eval- lime glass substrates by conventional direct current (DC) uated from the transmittance spectra. According to the magnetron reactive sputtering technique at 100 watt using results, the film annealed at 400 C obtains the better an ITO ceramic target (In O :SnO , 90:10 wt%) in argon optical properties due to the high refractive index while the 2 3 2 atmosphere at room temperature. The films obtained are film produced at 100 C exhibits much better photoactivity exposed to the calcination process at different temperature than the other films as a result of the large optical energy up to 700 C. X–ray diffractometer (XRD), ultra violet- band gap. visible spectrometer (UV–vis) and atomic force micros- copy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, 1 Introduction optical and photocatalytic properties of the films are compared with each other. The results obtained show that Since the discovery of the transparent conducting ox