第5章 Wet工艺.docVIP

第五章 WET工序 5.1 WET工序的构成 TFT-LCD在Array段的制程通常会分为镀膜，曝光和蚀刻三道大的工序。 Normally, Array process of TFT-LCD manufacturing is categorized into three major sub processes, sputtering, photo and etching. 而蚀刻工序根据工艺和设备的不同又可以分为干蚀刻和湿蚀刻，即Dry工序和WET工序。 And etching process could be categorized into Dry Etching (DE) and Wet Etching (WET) on the basis of technics and equipments. 作为蚀刻工序的一种实现方式，WET工序详细来讲可以包括清洗，湿蚀刻和脱膜。 As one of etching solution, Wet Etching includes washing, wet etching and stripping. 清洗：包括初清洗和成膜前清洗。 Washing: including pre-washing and pre-deposition washing. 初清洗即玻璃基板从PP box中拆包之后，进行的第一道清洗，它的主要目的是为了清除玻璃基板表面本身携带的油污以及微尘颗粒。 Pre-washing is the first cleaning process after package of glass substrate being taken apart and the main purpose of pre-washing is to get rid of dirt and particles on glass substrate. 成膜前清洗即在每一道成膜之前进行的清洗，目的虽然也是为了去除油污以及颗粒，但是这些杂质更多是由于外界污染造成，而去除这些杂质是为了成膜的顺利进行，提高成膜的品质。 Initial-washing, cleaning process before sputtering for each glass substrate, aims to wipe off dirt and particles like the purpose of pre-washing, however most of this impurities accumulated on glass substrate is due to external ambient contamination; to wipe off the impurities could well assist sputtering and improve the quality of sputtering process. 湿蚀刻：对于金属层和ITO导电层使用湿蚀刻进行蚀刻。湿蚀刻是使用相应的金属蚀刻液和ITO蚀刻液对膜层进行腐蚀，可以去除掉不被光阻保护的部分，从而形成我们需要的线路结构。 Wet Etching: Use wet etching for metal layer and ITO conductive layer. Wet Etching is to use corresponding metal etching solution or ITO etching solution to erode metal or ITO layer, which can wipe off unwanted parts without photo resist protection and remain wanted parts that compose wanted circuits. 脱膜：无论干蚀刻还是湿蚀刻结束之后，都必须将所成线路上覆盖的光阻去除。相应的会使用脱膜液将光阻分离出来并去除，保证下一道成膜顺利进行。 Stripping: the photo resist will be removed after both dry etching or wet etching. And corresponding resolution will be applied to wipe off the photo resists, which is to ensure next process goes well. 5.2 WET 工序(清洗.脱膜,蚀(湿)刻)的工艺原理 Technique philosophy of Wet Etching process 5.2.1 清洗的工艺原理 Process Phi