《STB22NS25Z - STP22NS25Z》.pdfVIP

STB22NS25Z - STP22NS25Z 2 N-channel 250V - 0.13? - 22A - TO-220 / D PAK Zener-protected MESH OVERLAY? Power MOSFET General features Type VDSS RDS on ID STB22NS25Z 250V 0.15? 22A STP22NS25Z 250V 0.15? 22A s ■ 100% avalanche tested t 3 c 3 2 1 ■ Extremely high dv/dt capability 1 u d TO-220 o D2PAK r Description P Using the latest high voltage MESH OVERLAY? e t process, STMicroelectronics has designed an e l advanced family of Power MOSFETs with o outstanding performance. The new patented s STrip layout coupled with the Company’s b Internal schematic diagram proprietary edge termination structure, makes it O - suitable in coverters for lighting applications. s Applications t c ■ Switching application u d o r P e t e l o s b O Order codes Part number Marking Package Packaging STB22NS25Z B22NS25Z D2PAK Tape reel STP22NS25Z P22NS25Z TO-220 Tube June 2006 Rev 2 1/14 14 Contents STB22NS25Z - STP22NS25Z Contents 1 Electrical ratings . . . . 3 2 Electrical characteristics . . 4 2.1 Electrical characteristics curves . . . . 6 3 Test circuits . 8 4 Package mechanical data . . 9 s t c 5 Revision history . . . 12 u d o r P e t e l o s b O - s t c u d o r P e t e l o s b O 2/14 STB22NS25Z - STP22NS25Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage VGS 0 250 V VDGR Drain-gate voltage RGS 20 k? 250 V VGS Gate- source voltage ± 20 V I Drain current continuos at T 25°C 22 A D C I Drain current continuos at T 100°C 13.9 A D 1 C IDM Drain current pulsed 88 s A t PTOT Total dissipation at TC 25°C 135 c W u Derating factor 1.07 W/°C d o VESD G-S Gate source ESD HBM-C 100pF, R 1.5K? r2500 V dv/dt 2 Peak diode recovery voltage slope P 5 V/ns e Tstg Storage temperature t e –55 to 150 °C l Tj Max. operating junction temperature o s 1. Pulse width limited by safe operating area b 2. ISD 22A, di/dt 200A/μs, VDD 80% V BR DSS O - Table 2.