berkley_半导体工艺讲义26--mems-生物芯片-光电芯片.pdf

EE143 F05 Lecture 26 Sealing of Cavities Thermal Deposition Oxidation Professor N Cheung, U.C. Berkeley 1 EE143 F05 Lecture 26 Deep Reactive Ion Etching Uses high density plasma to alternatively etch silicon and deposit an etch-resistant polymer on side walls Polymer Polymer deposition Silicon etch using SF6 chemistry Professor N Cheung, U.C. Berkeley 2 EE143 F05 Lecture 26 Use of SOI for MEMS Process oxide mask layer Si device layer, 20 µm thick buried oxide layer 1) Begin with a bonded SOI wafer. Grow and etch a thin thermal oxide layer to act Si handle wafer as a mask for the silicon etch. silicon 2) Etch the silicon device layer to expose the buried oxide layer.