Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination.pdfVIP

Hindawi Publishing Corporation Advances in Materials Science and Engineering Volume 2010, Article ID 398590, 6 pages doi:10.1155/2010/398590 Research Article Anisotropic Ferro- and Dielectric Properties of Textured Bi Ti O Ceramics Prepared by the Solid-State Reaction 4 3 12 Based on Multiple Calcination Xiangyu Mao, Wei Wang, Hui Sun, and Xiaobing Chen College of Physics Science and Technology, Yangzhou University, Yangzhou 225002, China Correspondence should be addressed to Xiaobing Chen, xbchen@ Received 3 July 2010; Revised 22 September 2010; Accepted 13 October 2010 Academic Editor: Z. H. Barber Copyright © 2010 Xiangyu Mao et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The grain-oriented Bi Ti O (BIT) samples were prepared by the solid-state reaction method with a multicalcination process. 4 3 12 The grain-oriented BIT samples exhibit anisotropic structural, ferroelectric, piezoelectric, and dielectric properties. The remanent polarization (2Pr ) and the piezoelectric constant (d33 ) of a/b- and c-direction BIT ceramics are 49.5 μC cm−2 , 22.2 pC N−1 and 6.7 μC cm−2 6.9 pC N−1, respectively. The dielectric anomalies of samples are observed around 157 K and 232 K. The dielectric anomalies at around 157 K are related to oxygen vacancies. The activation energy of the dielectric relaxation of this anomaly is estimated to be 1.36 eV. Another dielectric anomaly at around 232 K is related to polarizable domains and the viscous motion of domain walls. 1. Introduction