Characterization and Modeling of DHBT in InPGaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator.pdfVIP

Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2012, Article ID 796973, 15 pages doi:10.1155/2012/796973 Research Article Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator S. Laurent,1 J. C. Nallatamby,1 M. Prigent,1 M. Riet,2 and V. Nodjiadjim2 1XLIM-High Frequency Components, Circuits, Signals and System Department (C2S2), Universite de Limoges, 7 rue Jules Valles, ´ ´ 19100 Brive, France 2 III–V Lab, Joint Lab between Bell Labs, TRT and CEA/Leti, Route de Nozay, 91460 Marcoussis, France Correspondence should be addressed to M. Prigent, michel.prigent@xlim.fr Received 13 September 2011; Accepted 18 November 2011 Academic Editor: Christoph Sandner Copyright © 2012 S. Laurent et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We = 700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscilla