Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated Thin Films.pdfVIP

Hindawi Publishing Corporation Research Letters in Materials Science Volume 2008, Article ID 826402, 4 pages doi:10.1155/2008/826402 Research Letter Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films Pankaj Sharma and S. C. Katyal Department of Physics, Jaypee University of Information Technology, Waknaghat, Solan, 173215 Himachal Pradesh, India Correspondence should be addressed to Pankaj Sharma, pankaj.sharma@juit.ac.in Received 18 October 2007; Accepted 26 February 2008 Recommended by Maria Loi The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2 Se3 thin films. Thin films of As Se and (As Se ) Ge were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and 2 3 2 3 90 10 refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As Se . The decrease of optical band gap has been 2 3 explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system. Copyright © 2008 P. Sharma and S. C. Katyal. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 1. INTRODUCTION studied [11– 13] because of the fact that Ge, As, and Se are