Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition.pdfVIP

Hindawi Publishing Corporation Advances in Materials Science and Engineering Volume 2010, Article ID 923409, 8 pages doi:10.1155/2010/923409 Research Article Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition A. H. Ramelan,1 H. Harjana,1 and P. Arifin2 1 Physics Department, Research Centre for Smart Materials and Energy, Faculty of Mathematics and Natural Sciences (FMIPA), Sebelas Maret University (UNS), Jl. Ir. Sutami no. 36A, Surakarta 57126, Indonesia 2 Physics Department, Electronic Materials Laboratory, Faculty of Mathematics and Natural Sciences (FMIPA), Bandung Institute of Technology (ITB), Jl. Ganesha no. 10, Bandung 40132, Indonesia Correspondence should be addressed to A. H. Ramelan, aramelan uns@ Received 14 August 2010; Accepted 1 October 2010 Academic Editor: Maria Antonietta Loi Copyright © 2010 A. H. Ramelan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Epitaxial Alx Ga1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers ◦ ◦ grown on GaAs at 580 C and 600 C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for prod