High-Temperature Electroluminescence of InGaNGaN Light-Emitting Devices with Multiple Quantum Barriers.pdfVIP

Hindawi Publishing Corporation Advances in Condensed Matter Physics Volume 2012, Article ID 145689, 7 pages doi:10.1155/2012/145689 Research Article High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers Ya-Fen Wu Department of Electronic Engineering, Ming Chi University of Technology, Taishan, New Taipei City 243, Taiwan Correspondence should be addressed to Ya-Fen Wu, yfwu@.tw Received 27 August 2012; Accepted 27 September 2012 Academic Editor: Donghui Li Copyright © 2012 Ya-Fen Wu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We investigate the high-temperature characteristics of InGaN/GaN multiple quantum well light-emitting devices with and without multiple quantum barriers (MQBs) in depth. The electroluminescence measurements were carried out over a temperature range from 200 to 380 K and an injection current level from 1 to 100 mA. Enhanced carrier confinement and stronger carrier localization in the active layer are achieved for the sample with MQBs. Furthermore, it is found that the external quantum efficiency of the sample possessing MQBs is higher than that of the sample with GaN barriers. The MQB structure improves the high-temperature operation of light-emitting devices. 1. Introduction epitaxial layers, the InGaN-based heterostructures display misfit dislocation in nanocrystalline structures, which lead The progress in the epitaxial growth and device processing of to nonradiative recombination centers. The perform