avr_app_100.pdfVIP

AVR100: Accessing the EEPROM Features 8-bit • Random Read/Write • Sequential Read/Write Microcontroller • Runable Test/Example Program Introduction Application This application note contains routines for access of the EEPROM memory in the AVR Note Microcontroller. Two types of Read/Write access has been implemented: • Random Read/Write: The user must set up both data and address before calling the Read or Write routine. • Sequential Read/Write: The user needs only to set up the data to be Read/Written. The current EEPROM address is automatically incremented prior to access. The address has to be set prior to writing the first byte in a sequense. The application note contains four routines which are described in detail in the follow- ing sections. This application note contains routines for accessing the EEPROM in all AVR devices. Note: In the latest devices the EEWE bit in EECR is called EEPE, and the EEMWE is called EEMPE. Also in the latest devices the EECR consist of two extra bits to set the Programming Mode, EEPM0 and EEPM1. These two bits needs to be initialized before EEPE is set. Random Write – Subroutine “EEWrite” Three register variables must be set up prior to calling this routine: • EEdwr – Data to be written • EEawr – Address low byte to write • EEawrh – Address high byte to write The subroutine waits until the EEPROM is ready to be programmed by polling the EEPROM Write Enable – EEWE bit in the EEPROM Control Register – EECR. When EEWE is zero, the contents of EEdwr is transferred to the EEPROM Data Register – EEDR, and the contents of EEawrh:EEawr is transferred to the EEPROM Address Register – EEARH:EEARL. First the EEPROM Master Write Enable – EEMW