a novel vertical stepped doping poly-si tft (vsd-tft) for leakage current improvement：一个新的垂直阶梯掺杂多晶硅薄膜晶体管（vsd-tft）泄漏电流的改进.pdfVIP

Superlattices and Microstructures 63 (2013) 18–28 Contents lists available at ScienceDirect Superlattices and Microstructures j o u r n a l h o m e p a g e : w w w . e l s e v i e r . c o m / l o c a t e / s u p e r l a t t i c e s A novel vertical stepped doping poly-Si TFT (VSD-TFT) for leakage current improvement Ali A. Orouji ⇑, Robabeh Esmailnezhad, Morteza Rahimian Electrical Engineering Department, Semnan University, Semnan, Iran a r t i c l e i n f o a b s t r a c t Article history: In this paper, we report a novel vertical stepped doping poly-Si thin Received 12 February 2013 film transistor (VSD-TFT) in which the channel doping density con- Received in revised form 10 July 2013 sists of five sections with different uniform densities in order to Accepted 7 August 2013 reduce the OFF-state leakage current and increase the ON-state Available online 15 August 2013 current. The key idea in this work is to reduce the leakage current by creating two side barriers at two sides of central barrier and a Keywords: Defect built-in electric field for increasing the ON-state current. Using Grain boundary two-dimensional and two-carrier device simulation, we demon- On/off current ratio strate that the OFF-state leakage current of the VSD-TFT decreases Leakage current as compared with the C-TFT and the on/off current ratio is Poly-Si