a sige hbt low noise amplifier using on-chip notch filter for k band wireless communication：sige hbt低噪声放大器使用片内陷波滤波器的频带的无线通信.pdfVIP

Microelectronics Journal 45 (2014) 683–689 Contents lists available at ScienceDirect Microelectronics Journal journal homepage: /locate/mejo A SiGe HBT low noise amplifier using on-chip notch filter for K band wireless communication Kai Jing n, YiQi Zhuang, ZhenRong Li n, YongQian Du, YanLong Zhang Department of Microelectronics, Xidian University, Hi-Tech Development Zone, Xi ‘an City, Shaanxi Province, PR China a r t i c l e i n f o a b s t r a c t Article history: In this paper a new notch filter topology has firstly been described. In order to improve the input match Received 17 July 2013 as well as enhance the gain on the operating frequency of 20.5 GHz, extra capacitor has firstly been Received in revised form added in the passive base-collector notch filter forming a new scheme, eliminating the operating- 27 February 2014 frequency (op) input mismatch in formal base-collector notch filters. EM simulations have shown that Accepted 1 April 2014 the LNA obtained 14.1 dB gain at 20.5 GHz and high image-rejection ratio (IRR) of 33.5 dB at image Available online 7 May 2014 frequency of 15 GHz, and S11 of -15 dB was obtained compared to 8 dB without notch filter at operating Keywords: frequency, NF was below 5 dB at gain peak frequency, power consumption was 18 mW at 3 V voltage Notch filter supply, and IIP3 was 3.43 dBm ensuring a high linearity in SiGe bipolar process