2μm半导体激光器有源区量子阱数的优化设计.pdfVIP

第44卷第7期 红外与激光工程 2015年7月 Vol.44No.7 InfraredandLaserEngineering Jul.2015 2 滋m半导体激光器有源区量子阱数的优化设计 安 宁袁刘国军袁李占国袁李 辉袁席文星袁魏志鹏袁马晓辉 (长春理工大学 高功率半导体激光国家重点实验室袁吉林 长春 130022) 摘 要院利用LASTIP软件理论分析了有源区量子阱数目对不同组分的InGaAsSb/AlGaAsSb 2 滋m 半导体激光器能带尧电子与空穴浓度分布以及辐射复合率等性能参数的影响遥 研究表明院量子阱的个 数是影响激光器件性能的关键参数袁需要综合分析和优化遥 量子阱数太少时袁量子阱对电子束缚能力 弱袁电子在p层中泄漏明显袁辐射复合率低遥 量子阱数过多时袁载流子在阱内分配不均匀袁p 型层中电 子浓度升高袁器件内损耗加大袁辐射复合率下降遥结合对外延材料质量的分析袁InGaAsSb/AlGaAsSb 半 导体激光器有源区最优量子阱数目为2~3遥 该研究结果可合理地解释已有实验报道袁并为2 滋m半导 体激光器结构设计提供理论依据遥 关键词院 多量子阱激光器曰 有源区量子阱数目曰 数值模拟 中图分类号院TN243 文献标志码院A 文章编号院1007-2276(2015)07-1969-06 Optimizationofthenumberof quantumwellsinthe activeregion for2 滋mlaser diode An Ning, Liu Guojun, Li Zhanguo, Li Hui, Xi Wenxing, Wei Zhipeng, Ma Xiaohui (National Key Laboratory on High-power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China) Abstract: In order to find the appropriate quantum well number, the electrical and optical characteristics of InGaAsSb/AlGaAsSb laser diode with various QW numbers and contents were investigated using LASTIP simulation program. In the case of single QW, the total number of carriers injected into the QW will be small and the radiative recombination will be poor. When the number of QWs was increased into larger than 4, however, the optical performance started to degrade because of the uneven distribution of carrier concentration and the higher electron concentration in the p-side, which increased in the internal loss in the active region. Taking into account of the effect of QWs number on the epitaxy layers quality, the optimized number of InGaAsSb/AlGaAsSb 2 滋m LDs was 2