Sn-ZnCu焊点剪切强度与界面显微组织分析 毕业论文.doc

Sn-ZnCu焊点剪切强度与界面显微组织分析 毕业论文.doc

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Sn-Zn/Cu焊点剪切强度与界面显微组织分析 摘要 由于含铅物质对人体和环境的危害,钎料无铅化已成为电子封装连接材料发展的必然。μm、1000μm、1300μm)的剪切强度和界面显微组织进行分析研究,得出以下结论: 随焊球直径的增大,Sn-9Zn/Cu钎焊接头剪切强度呈V字形变化,先减小后增大。在对剪切断口形貌的观察上,分析得出随焊球直径的增大,界面处韧窝由密而深变得疏而浅,并且断口位于焊料上。在对界面显微组织进行观察时,从总体上看,随BGA球直径的增大,IMC层厚度增加。BGA球直径从750μm增加到1000μm时,IMC层厚度增大的趋势很快,当BGA球直径从1000μm增加到1300μm时,IMC层厚度增大的趋势变得缓慢起来。对于不同尺寸的焊点,界面微观组织的成分基本相同显微组织主要由Cu-Zn化合物、Cu5Zn8化合物和富Sn相。随着与Cu板距离的增大,依次出现Cu-Zn化合物、Cu5Zn8化合物、富Sn相,并且各相在一定范围内共同存在。Sn-9Zn;尺寸效应;剪切强度 Shear strength and interface microstructure analysis of Sn-Zn/Cu solder joints Abstract Because of lead materials is harmful to human body and the environment, the connection materials which is used for electronic packaging has become a necessity as the development. At the point of melting point, toxicity, resources and price, Sn-Zn lead-free solder is the best choice. At present time, the research for Sn-Zn lead-free solder has made much progress in wettability stain resistance and bad fatigability. Sn-Zn solder which comparied with other series of solders is still the most promising. Now the research for Sn-Zn solder in shear performance and microstructure is relatively less. So in this paper the object of the research is the Sn-9Zn solder and Cu substrate welding structure, using cutting machine, scanning electron microcopy and metallographic microscope to study Sn-9Zn/Cu brazed joint (the diameter of the soldered ball is 750μm、1000μm、1300μm),including the shear strength and interface microscopic structure, the conclusions are as follows: with the increase of the diameter of solder ball, the increase trend of shear strength of Sn-9Zn/Cu brazed joint represent V, that is the tends to decrease firstly and then increase. At the same time, the observation and analysis of the pattern of fracture, the conclusion is as follows: with the increase of the diameter of solder ball, the dimple which is close and deep becomes thin and light.with the increase of the diameter of solder ball, the thickness of the IMC increase, but when the di

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