11光电子学第2章-5绪论.pptVIP

8. The phototransistor (光电晶体管) 9. Metal-Semiconductor detectors 10. Quantum well intersubband detector 11. Advanced Detectors * * _ + b e c Emitter is heavy doped: n+ The area of collector is large Base layer is narrow and light doped working state: EB junction is forward biased; BC junction is reverse biased; Base is dangling. high gain due to the transistor action(晶体管整流放大作用); The advantage of phototransistor: low noise compared to an APD. Ⅰ. The structure Contact Contact layer: lightly doped , absorbing layer. thick enough to allow the Schottky barrier formation; thin enough to allow light to pass through metal layer: Contact Contact Advantage of M-S detectors : high speed (f 150GHz) Ⅲ. MSM detector Two Schottky barriers are placed in a planar geometry close to each other Advantage of MSM: low dark current , internal gain, OEIC application (光电子集成应用) Advantage of Q-W detector (such as GaAs/InP QwD): to detect long wavelength radiation Narrow bandgap materials are “soft” and difficult to produce— Device yield is poor . Established GaAs or InP based technologies can be used to produce high yield device. BAND TO BAND ABSORPTION DETECTORS QUANTUM WELL INTERSUBBAND DETECTORS It is difficult to fabricate tunable detectors. Tunability can be achieved by altering the well width. A comparison of band to absorption detectors and quantum well intersubband detectors for wavelength detectors Important issues in detectors : Speed 响应速度 Integration 可集成化 Tunability 可调性 Optical absorption in semiconductors ●Process by which a photon creates e-h pairs in semiconductors. ● The process can involve an electron moving from a valence band to conduction band OR from valence band to an impurity level in the bandgap. Cutoff wavelength for absorption ● In band to band absorption, the photon energy must be larger than the bandgap to