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Advantage Preparation 1. Simple, Mature and widely used. 2. Fit for preparing NWs with good dispersion. SICCAS Preparation 2. Solution Growth Method Two materials : ZnO seeds and a Cr layer Step 1: fabricate a ZnO strip pattern covered with Cr at the top. (100) Si wafer clean spin coat photoresist Optical lithography pattern Magnetron sputtering deposit 300 nm ZnO and 10 nm Cr Qin, Y., R. S. Yang, et al. (2008). Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate. Journal of Physical Chemistry C 112(48): 18734-18736 SICCAS Preparation Step 2: growth of laterally aligned NWs Put the substrate into growth solution and aged for 12 h at 80 ℃ Zn(NO3)2 and HMTA in the solution were both 0.0025 mol/L solution SICCAS Preparation The orientation of the nanowires follows the surface curvature of the pattern at the end. SICCAS S., Y. Shen, et al. (2010). Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates. Advanced Functional Materials 20(9): 1493-1495. Preparation ZnO NW arrays grown on patterns evaporated with 10 nm Cr at an angle of θ=70° in reference to the substrate normal. SICCAS Preparation SICCAS Advantage 1. Any substrates can be used for the lateral growth of ZnO NWs with this method. 2. The growth temperature(100℃) is so low that the method can be applied to a wide range of substrates. 3. Control growth orientation High out voltage High efficiency High performance nanogenerator Novel nanostructure Outlook SICCAS Outlook SICCAS Harvest the energy produced by acoustic waves, ultrasonic waves, or hydraulic pressure/force 16 * Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo LOGO Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Company Logo Members: 刘才 刘秉龙 李龙 龙胜 董伟 16 Piezoelectric Nanogenerators Basedon Zinc O
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