CMOS集成电路设计3概论.ppt

Design Example;Large Hadron Collider Experiences;Proton-Proton Collision ;Electron-Positron Collision;Silicon Microstrip detectors ;Equivalent Scheme;Electronics Readout ;Pre-amplifier Topologies;Pre-amplifier’s Noise Performance;Pre-amplifier’s performances;Pile-up Phenomenon;Shaper’s characteristics;Semi-Gaussian Filters (CR-RCn);Noise Optimisation for Capacitive readout system (charge amplifier + shaper ampifier);Output Noise Calculation;Equivalent Noise Charge (ENC) at Input (1);Equivalent Noise Charge (ENC) at Input (2);Equivalent Noise Charge (ENC) at Input (3);Equivalent Noise Charge (ENC) at Input (4);Optimisation of Noise Performance ;Input Noise Matching Conditions (1);Input Noise Matching Conditions (2);Optimisation of total ENCT;ENCT under Mismatched Conditions (1);ENCT under Mismatched Conditions (2);Optimal Pulse Shaper Characteristics;Optimisation of Order n;Optimisation of Shaping Time ts;Design Criteria of Charge Amplifier (1);Design Criteria of Charge Amplifier (2);Design Criteria of Charge Amplifier (3);Schematics Diagram of Readout ;Preamplifier and Shaper;Preamplifier’s Architecture;Noise Characteristics;Noise performance optimisation;AC Characteristics;Simulation Results;Large-Signal Time Response ;Shaper CR-RC;Performance for Preamp.+ Shaper;Noise performance;Layout of Chip;Bipolar Realisation;Noise Sources in Bipolar Transistors;Equivalent Input Noise;Optimisation of Noise Performance (1);Optimisation of Noise Performance (2);Main Characteristics of Preamplifier;Layout of Chip;Performance of Chip