IC工艺_1_2.ppt

§1.4 晶向、晶面和堆积模型;晶向;晶向的定义;晶向指数;晶向的密勒指数;各晶向上的原子线密度;晶面;用密勒指数表示的晶面Miller Indices of Crystal Planes;各晶面上的原子面密度;半导体器件的常用晶面;堆积模型;密排面;密堆积模型;密堆积模型Close packed crystals;密堆积结构Close packed structures;六角密积 vs. 立方密积; ;面心立方金刚石结构的密堆积模型;硅的密堆积模型;硅晶格密堆积结构的特点;金刚石晶格的硅晶面的性质;§1.5 硅晶体中的缺陷;实际的半导体材料中的问题;晶体缺陷;缺陷密度;硅中的主要缺陷;Various types of defects can exist in a crystal (or can be created by processing steps). In general, these cause electrical leakage and are result in poorer devices.;点缺陷;Crystal Defects;Crystal Defects;空位与间隙原子;另一种点缺陷：外来原子;(c) 2003 Brooks/Cole Publishing / Thomson Learning;点缺陷产生的主要原因;加工过程中产生点缺陷的主要因素;位错;Crystal Defects;Crystal Defects;产生位错的主要原因;位错对器件的主要影响;位错的利用;(c) 2003 Brooks/Cole Publishing / Thomson Learning;Figure 4.5 The perfect crystal in (a) is cut and an extra plane of atoms is inserted (b). The bottom edge of the extra plane is an edge dislocation (c). A Burgers vector b is required to close a loop of equal atom spacings around the edge dislocation. (Adapted from J.D. Verhoeven, Fundamentals of Physical Metallurgy, Wiley, 1975.);Figure 4.7 Schematic of slip line, slip plane, and slip (Burgers) vector for (a) an edge dislocation and (b) for a screw dislocation. (Adapted from J.D. Verhoeven, Fundamentals of Physical Metallurgy, Wiley, 1975.);层错;Crystal Defects;Crystal Defects;Crystal Defects;Figure 4.13 Electron photomicrographs of dislocations in Ti3Al: (a) Dislocation pileups (x26,500). (b) Micrograph at x 100 showing slip lines and grain boundaries in AI. (c) Schematic of slip bands development.;(c)2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning? is a trademark used herein under license.;Figure 4.16 (a) The atoms near the boundaries of the three grains do not have an equilibrium spacing or arrangement. (b) Grains and grain boundaries in a stainless steel sample. (Courtesy Dr. A. Deardo.);(c) 2003 Brooks/Cole Publishing / Thomson Learning;(c) 2003 Brooks/Cole Publishing / Thomson Learning;§1.6 硅中杂质;不同材料的电阻率;本征半导体;杂质半导体;杂质浓度;半导体中杂