专业英语2第四讲翻译.docVIP

典型的杂质的扩散是 将半导体晶片放置于反应炉中，再让包含有所需掺杂剂的惰性气体通过半导体晶片。 扩散 diffusion 惰性气体 inert gas A typical impurity diffusion is that semiconductor wafers are placed in a furnace and an inert gas containing the desired dopant are passed through it. Diffusion of impurities is typically done by placing semiconductor wafers in a furnace and passing an inert gas that contains the desired dopant through it. 离子注入是可以把一种材料的离子在电场中加速并注入另一种固体的材料工程工艺 注入: n. implantation Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and implanted into another solid. 相对于其它的扩散过程，离子注入的主要优点在于它对杂质掺杂的精确的控制和重复性，以及其较低的加工温度要求。 重复性reproducibility 精确的 precise Compared with other diffusion process, The main advantages of ion implantation are its more precise control and reproducibility of impurity dopings and its lower processing temperature requirements compared to those of the diffusion process. 对于给定的离子剂量，退火温度与经过30分钟退火后，可使90％注入离子活化的温度相对应。 退火vt . annealing temperature 离子剂量 ion dose At a given ion dose, the annealing temperature corresponds to the temperature at which 90% of the implanted ions are activated after 30-min annealing. 非晶层下方的单晶半导体可作为非晶层再结晶的种子区。 非晶 adj. amorphous 无定形的 再结晶 n. recrystallization The single crystal semiconductor underneath the amorphous layer serves as a seeding area for recrystallization of the amorphous layer. 在固相外延过程中，掺入的杂质原子和宿主原子一起纳入晶格，由此，可以实现在相对较低的温度下的全激活。 During the solid phase epitaxial process, the impurity dopant atoms are incorporated into the lattice sites along with the host atoms; thus, full activation can be obtained at relatively low temperatures. 随着器件尺寸越来越小，要尽量减少杂质扩散，需要低温和时间短的加工工艺。 尺寸 n. dimension As device dimensions become smaller, low temperature and short time processing are required to minimize impurity diffusion. 在这些技术中，最有吸引力的是快速退火技术，它使用宽频谱光源（例如，非相干光源），并用电子束或离子束加热，因为要求较低的功率密度并且不产生光干涉效应。 干涉 interference 退火 anneal 频谱光源 spectral sources 非相干 incoherent Among these techniques , the most attractive are the