Ion Implant Introduction-TF.pptVIP

Implant Process Introduction OE8 DIFF Outline Ion implant introduction Implant equipment fundamentals Process control items Implant Applications What is Ion Implant Typical dose and Energy range Implant equipment fundamentals Implant Equipment Introduction Implanter Fundamentals Basic functions of the ion Implanter Ionization Extraction – Acceleration Analysis Beam control Monitoring Control of wafer charging Scanning Implanter Fundamentals Sources: Ionization Implanter Fundamentals - Extraction Electrodes Implanter Fundamentals - Extraction Electrodes Implanter Fundamentals - Species Selection Implanter Fundamentals - Species Selection Implanter Fundamentals - Species Selection Implanter Fundamentals -Beamline and Acceleration Implanter Fundamentals - DC vs. LINAC Acceleration Process Control items Dose and profile (Energy) Dose Uniformity Implant Angle Charge up (Gate Ox Integrity) High Temperature (Resist damage) Metal Contamination Implant Damage Implant Dose Dose: the total number of ions that are implanted into the wafer per unit area. D = It/Ane D = dose in ions/cm2 I = ion beam current in Amperes A = implant area in cm2 t = time in seconds n = charge state of ion ( “+”=1, “++”=2) e = charge of electron = 1.602 * 10-19 coulomb Implant Dose Monitor – Faraday Cup Effect of Process and Hardware Conditions on Dosemetry Beam Interruptions Beam shape, beam position Scan speed Photoresist implants Scan offsets Vacuum levels Underdose Poor vacuum in the MRS region due to leaks Incomplete activation at RTA step Cross contamination, counterdoping Positive beam current flow into the beamstop and dose processor Overdose Poor vacuum in Target Chamber due to leak, photoresist outgassing or old cryo pumps Channeling Cross contamination, co-doping Excessive Beam width Negative beam current into beamstop or electrical connections between beamstop and dose processor Implant Profile Process Control Item - Channeling Process Control Item - Channeling Process