5、Parasitic Internal Currents.pptVIP

Specialized English School of Physics Optoelectronic Engineering W. Zhang It is the dimensions of a base or emitter stripe that are appropriately designated length and width. For dimensions in the x direction, into the silicon，the term thickness is far more descriptive and appropriate，because the latter dimensions are typically much smaller． More important，clarity is served by consistency in these matters． Curiously，even engineers，who are supposed to have above-average skill in spatial visualization，sometimes seem to have difficulty in understanding and verbalizing the three-dimensional aspects of the BJT．One too frequently hears and reads tangled syntax such as．“This transistor has a very thin base width,‘ instead of the simple declaration that the transistor has a thin base region． Most of the holes shown entering the emitter junction in Figure 2-5 pass through it and recombine in the low-lifetime N+ emitter region, so long as the BJT is not being operated with extremely low current levels． These holes are identically those represented by the profile labeled PE（x) that is shown at the left in Figure 2-3(d). In Figure 2一6，the recombination is symbolized by the gap in the IB arrow inside the emitter region，with holes approaching it from the base side and the recombining electrons being supplied within the emitter. . The remaining two currents are parasitic in the sense that they vanish in the ideal BJT，and nearly vanish in the silicon BJT．First, a small current is shown in Figure 2一4 as splitting from IB to a recombination gap within the base region．A small but finite portion of the flood of electrons diffusing from emitter to collector fails to reach the collector，recombining in transit，and it is this occurrence that the second gap symbolizes． In the early BJTs，most of the base current was consumed by this mechanism because the base thickness XB amounted to tens of micrometers and base-region lifetime values τB were sometimes low．As a