电子2班202-203-B49.docVIP

EXAMPLE 5.8 OBJECTIVE Calculate the forward-bias voltage required to generate a forward-bias current density of 10 A/cm2 in a Schottky diode and a pn junction diode. Consider diodes with parameters. A/cm2 and A/cm2 Solution For the Schottky diode ,we have Neglecting the (-1) term, we can solve for the forward-bias voltage .We fine For the pn junction diode, we have Comment A comparison of the two forward-bias voltages shows that the Schottky diode has an effective turn-on voltage that, in this case ,is approximately 0.37 V smaller than the turn-on voltage of the pn junction diode. Exercise Problem EX5.8 A pn junction diode and a Schottky diode have equal cross-sectional areas and have forward-biased currents of 0.5 mA .The reverse-saturation current of the Schottky diode is 5χ10-7 A. The difference in forward-bias voltage between the two diodes is 0.30 V. Determine the reverse-saturation current of the pn junction diode.（Ans.4.66*10-12A） TEST YOUR UNDERSTANDING TYU5.5 The reverse-saturation current of a GaAs pn junction diode is Is=10-19A. Assume T=300K.Determine the forward bias diode current for VD=0.95 V,(b)VD=1.0 V ,and(c)VD=1.05 V. [Ans.(a)0.85mA,(b)5.86mA,(c)40.4mA] TYU5.6 The forward-bias current in a GaAs pn junction diode at T=300 K is ID=12 mA .The reverse-saturation current is Is=5χ10-19 A. Determine the required forward-bias diode voltage.(Ans.VD=0.977V) Σ 5.6┃ METAL-SEMICONDUCTOR OHMIC CONTACTS Objective : Describe the characteristice of a metal-semiconductor ohmic contact. Contacts must be made between any semiconductor device ,or integrated circuit ,and the outside world .These contacts are made via ohmic contacts . Ohmic contacts are metal-to-semiconductor contacts ,but in this case they are not rectifying contacts .An ohmic contact is a low-resistance junction providing conduction in both directions between the metal and the semiconductor Ideally ,the current through the ohmic contact is a linear function of applied voltage