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FCPF20N60
July 2005TMFCP20N60 / FCPF20N60600V N-Channel MOSFETFeatures· 650V @TJ = 150°C· Typ. RDS(on) = 0.15?· Ultra low gate charge (typ. Qg = 75nC)· Low effective output capacitance (typ. Coss.eff = 165pF)· 100% avalanche testedDescriptionSuperFETTM is, Farichild’s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced chargebalance mechanism for outstanding low on-resistance andlower gate charge performance.This advanced technology has been tailored to minimize con-duction loss, provide superior switching performance, and with-stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system min-iaturization and higher efficiency.DGG D STO-220G D STO-220FSAbsolute Maximum Ratings*Drain current limited by maximum junction temperatureThermal Characteristics?2005 Fairchild Semiconductor CorporationFCP20N60 / FCPF20N60 Rev. A11FCP20N60 / FCPF20N60 600V N-Channel MOSFETSuperFETPackage Marking and Ordering InformationElectrical CharacteristicsTC = 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. IAS = 10A, VDD = 50V, RG = 25?, Starting TJ = 25?C3. ISD?≤ 20A, di/dt?≤ 200A/?s, VDD?≤ BVDSS, Starting TJ = 25?C4. Pulse Test: Pulse width?≤ 300?s, Duty Cycle?≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsFCP20N60 / FCPF20N60 Rev. A12FCP20N60 / FCPF20N60 600V N-Channel MOSFETTypical Performance CharacteristicsFigure 1. On-Region CharacteristicsFigure 2. Transfer Characteristics2Top :VGS15.0 V210.0 V8.0 V7.0 V6.5 V16.0 VBottom : 5.5 V1150?C25?C-55?C0Notes :1. 250?s Pulse Test2. TC = 25?C0Note1. VDS = 40V2. 250?s Pulse Test-10 1VDS, Drain-Source Voltage [V]24 6 8VGS , Gate-Source Voltage [V]10Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage0.40.3VGS = 10V0.2VGS = 20VFigure 4. Body
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