Local Back Surface Field Silicon Solar Cell.pptVIP

Local Back Surface Field Silicon Solar Cell Process Engineering Department 15th.Jan Table of Contents Recombination in a Silicon Solar Cell Why Back Surface Field Aluminum-BSF, Local back surface field (Boron-BSF, Al-BSF) References Recombination in a Silicon Solar Cell Loss mechanism in a silicon solar cell Recombination in a Silicon Solar Cell Radiation Recombination Radiative recombination is when electrons “fall back” from the conduction band into the valence band, thus annihilating the same number of holes. Recombination in a Silicon Solar Cell Auger Recombination Auger effect: one electron gives up its extra energy to a second electron in the conduction or valance band during recombination thus moving it to a higher energy level. The excited electron then gives up this additional energy in a series of collisions with the lattice, thus returning to its original energy state. Recombination in a Silicon Solar Cell Recombination via Defect Levels (SRH Recombination) SRH- Shockley, Read and Hall an electron is captured by an unoccupied energy level (1); an electron is emitted from an occupied level into the conduction band (2); a hole is captured by an occupied energy level (3); a hole is emitted into an unoccupied state in the valance band (4). Recombination in a Silicon Solar Cell Recombination by doping Lifetime of a doped semiconductor: All three depend to some degree upon dopant concentration. Following image shows a summary of these dependencies. Recombination in a Silicon Solar Cell Why Back Surface Field Basic requirements of high efficiency silicon solar cells The dopant level in the base NA lies between 1.5 and 4*1016 cm-3 (0.4-1.07 Ωcm) (in general the lower value is more favorable in practice); The surface concentration Ns of emitter doping is approximately 2*1019 cm-3 (avoiding dead layers); For high efficiency a two stage emitter is required (SE); Both surfaces of the solar ce