Thermoelectric power measurements of wide band gap semiconducting nanowires.pptVIP

Thermoelectric power measurements of wide band gap semiconducting nanowires.ppt

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Thermoelectric power measurements of wide band gap semiconducting nanowires

One of the central physical quantities. TEP determine the efficiency of thermoelectric applications. * Rectify characteristics Rectify current Form a Ohmic like contact and thn schottky barrier simutaniously . Test electrical nd TEP measurement simultaniously * One microfabricated heater and two sets of thermometers * * Which means when the heat reaches the underlying silicon substrate, the heat dissipates quickly * * * * Show nonlinearity in low bias region, the effect of the Schottky barriers is increasing * The three dot lines are the TEP corresponding to three different devices with different diameter and same channel length = 1um * The solid line is linear fit to zero The negative sign indicates the majority carrier in ZnO are electrons, and ZnO nanowares are N-type semiconductors Typical value contact resistance is 10 -80k * The solid line is linear fit to zero The negative sign indicates the majority carrier in ZnO are electrons, and ZnO nanowares are N-type semiconductors * Diameter of Sample GaN nanowires is 80nm * * * * We can observe the linearity in both ZnO and GaN nanowires 16From gate-dependent FET behavior, we found that the field effect mobility is constant, and thus the energy-dependent change in mobility is negligible in the experimental range. * This experiment is taken under room temperature * This number is calculated from capacitance coupling This value agrees with the value we get from TEP measurement Conductance increase with gate voltage also shown that: the majority carriers in ZnO is electron. * The value n in the picture are all estimated in the TEP measurement. While FET characteristics provide an unreliable value of the carrier concentration TEP measurements provide an excellent tool to measure carrier concentration experimentally * Thermoelectric power measurements of wide band gap semiconducting nanowires Yunxi Guo Electrical Engineering University of Florida Application of wide bandgap semiconducting nanowires Applications

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