林辉松138-139-B17.docVIP

Figure 4.4 l Resistivity versus impurity concentration at T = 300 K in (a) silicon and (b) germanium, gallium arsenide, and gallium phosphide. (From Sze [14].) and (4.21b) We con now rewrite Equation (4.19) as (4.22a) or (4.22b) Equation (4.22b) is Ohm’s law for a semiconductor. The resistance is a function of resistivity, or conductivity, as well as the geometry of the semiconductor. If we consider, for example, a p-type semiconductor with an acceptor doping in which , and if we assume that the electron and hole mobilities are of the same order of magnitude, then the conductivity becomes (4.23) If we also assume complete ionization, Equation (4.23) becomes (4.24) The conductivity and resistivity of an extrinsic semiconductor are a function primarily of the concentration and mobility carrier. We can plot the carrier concentration and conductivity of a semiconductor as a function of temperature for a particular doping concentration. Figure 4.6 shows the electron concentration and conductivity of silicon as a function of inverse temperature for the case when Nd =1015cm-3. 译文： 图4.4升电阻率比在（一）硅和（b）锗，砷化镓，磷化镓和当T = 300 K表杂质浓度。 （从[14].） 图4.5巴的半导体材料作为电阻 (4.21b) 我们改写浓度方程（4.19）为 (4.22a) 或者 (4.22b) 方程（4.22b）是欧姆对半导体的法律。该电阻是电阻率，或导电功能，以及半导体的几何形状。 如果我们考虑，例如，一个具有受体p型半导体掺杂在其中，如果我们假设电子和空穴迁移率的大小顺序相同，那么其导电变成 (4.23) 如果我们也承担完全离子化，方程（4.23）变为 (4.24) 电导率和半导体电阻率的一个外在的功能主要是集中和流动的载体。 我们可以绘制出了载流子浓度随温度的特定功能的半导体掺杂浓度和电导率。图4.6显示了电子浓度的情况下，作为一个逆温度传导功能和硅当 = 1015立方厘米