汤湖 学号：2008304124 226页-227页.docVIP

CHAPTER6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor When a drain-to-source voltage, VDS, is applied, electrons flow from the source through the channel to the drain. The current is a function of the amount of charge the inversion layer that, in turn, is a function of the vertical electric field. The term field-effect refers to the concept that the current is controlled by an electric field per pendicular to the flow of charge. The basic transistor action is that the voltage across two terminals (gate-to-source) controls the current in the third terminal (drain). This device is called an n-channel MOSFET since the current is due to the flow of electrons in the channel. 6.1.2 Modes of Operation One primary electrical parameter of a MOSFET is the threshold voltage, VT. If the gate-to-source voltage is less than the threshold voltage, the transistor is cut off and all currents are zero. If the gate-to-source voltage is greater than the threshold voltage, an inversion layer is formed and a drain current can be induced. Figure 6.3 shows the transistor current-voltage characteristics. The drain current is plotted as a function of drain-to-source voltage for various gate voltages. In this case, a threshold voltage of VT = 0.5 V is assumed. If the transistor is biased in the saturation region, VDS VCS - VT, then ideally the drain current is independent of the drain-to-source bias and is given by ID = Kn(VGS - VT) 2 (6.1) The conduction parameter Kn is a function of electron mobility, oxide capacitance and the channel width-to-length ratio. 6.1.3 Amplification with MOSFETs One application of a transistor is to amplify a small, time-varying input signal Figure 6.4a shows a circuit that would perform this function If the Input signal is vi=0, Figure 6.4 1 (a) A circuit that can a time-varying input signal vi . (b) Load line and time-varying signals supe nmposed on trans