使用有机异质结降低硅表面以及触体少数载流子的再结合讲解.ppt

Reduction of minority carrier recombination at silicon surfaces and contacts using organic heterojunction Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE Digital Object Identifier: 10.1109/PVSC.2009.5411419 制作人：张国艳 Introduction: In the past: used a PECVD（等离子增强的化学蒸发沉积） grown amorphous-Si/crystalline-Si heterojunction for solar cell application In this paper: provided excellent passivation for the surface of the crystalline silicon PQ passivation and an organic semiconductor to create an organic/silicon heterojunction（under 100 cm/s） 太阳能电池工作的基本过程： 产生光生载流子；收集光生载流子从而产生电流；产生较大的光生电压；将产生的功率分配给负载及寄生电阻。 Content: Fig.1 (a) Molecular structure of PQ, the surface passivation precursor. (b) Molecular structure of TPD, the wide-bandgap organic used as the electron barrier for organic/silicon heterojunction. Fig.2 (a) Band Diagram of solar cell in which recombination at the metal contact dominates. The solid lines are desired direction of generated carrier flow and the dashed line represents the loss mechanism. (b) Effect of a suitable heterojunction that reduces the electron recombination at the anode due to the offset in the conduction band. A complementary structure would reduce the hole recombination at the cathode. Fig. 3. The reaction between PQ and silicon dimer Fig. 4 effective lifetime vs. minority carrier density for p and n type silicon wafers. Samples are coated with either with the thermally grown oxide(control), PQ, or nothing (unpassivated). Fig. 5 extracted surface recombination velocity vs. minority carrier density for p and n type samples passivated with PQ. Fig.5 (a) Metal-silicon diode structure. (b) Organic heterojunction diode structure. (c)p+ epi-silicon diode structure (d) IV characteristics of the 200μm x 200μm test structures clearly showing a decrease in recombination currents with the org