模拟电路第二章PPT.ppt

DME, GDUT * Department of Microelectronics Guangdong University of Technology Lecture 2: Basic MOS Device Physics Dr. Liu Yuan Liuyuan@gdut.edu.cn Design of Analog CMOS Integrated Circuits DME, GDUT * Outline Introduction MOS Structure MOS I-V Characteristics Second-order Effects MOS Small Signal Model Design of Analog CMOS Integrated Circuits DME, GDUT * 2.1 Introduction In this chapter, we study the physics of MOSFETs at an elementary level, covering the bare minimum that is necessary for basic analog design. We begin our study with the structure of MOS transistors and derive their I-V characteristics. Next, we describe second-order effects such as body effect, channel length modulation and subthreshold conduction. In the last, we derive a small signal model. Design of Analog CMOS Integrated Circuits DME, GDUT * 2.2.1 MOS structure Fabricated on a p-type substrate (bulk or body), the device consists of two heavily doped n regions (source and drain), a heavily-doped piece of polysilicon (gate) and a thin layer of silicon dioxide (gate oxide). The structure is symmetric with respect to S and D. Source is defined as the terminal that provides the charge carriers and drain as the terminal that collects them. The source and drain may exchange roles as the voltage varied. LD is the amount of side diffusion, Ldrawn is the total length of gate, Leff is the effective length which is equal to Leff=Ldrawn-2LD. Design of Analog CMOS Integrated Circuits DME, GDUT * 2.2.2 MOS symbols The substrate is denoted by “B” (bulk) rather than “S” to avoid confusion with the source. The source is positioned on top as a visual aid because it has a higher potential than its gate. The bulk terminal of NMOS and PMOS are always tied to ground and Vdd, we usually omit these connections in drawing. Design of Analog CMOS Integrated Circuits DME, GDUT * 2.3 MOS I-V characteristics Threshold voltage Derivation of I-V characteristics Design of Analog CMOS Integrated Circuits DME, GDUT * 2