模电仿真作业(题).docVIP

Project 1Common Emitter Amplifier designed for two lab periods Objective: This project will show how the h-parameters for a BJT can be measured and used in an equivalent circuit model for the BJT. A CE small signal amplifier will be biased and designed to specifications along with both low and high frequency response and adjustment. Series-series feedback will also be used to control the bandwidth and input impedance of the CE amplifier. Components: 2N2222 BJT Introduction: In order for circuits involving transistors to be analyzed, the terminal behavior of the transistor must be characterized by a model. Two of the models often used for a BJT are the hybrid- and the h-parameter models. The complete hybrid- circuit model for the BJT is shown in Figure 1-1. This model includes the internal capacitances and output resistance of the BJT. Inclusion of the internal transistor capacitances makes the hybrid- model valid throughout the entire frequency range of the transistor. Typical data sheet values of C and C are 13 pF and 8 pF respectively. These values are so small that C and C may be considered open circuits for midband frequencies. The resistance rx typically has a value in the tens of ohms and can be considered a short circuit while r and ro are usually extremely large in value and can be considered open circuits. The h-parameter small signal model for the BJT is characterized by the four h-parameters and is shown in Figure 1-2. Unlike the hybrid- model, the h-parameter model does not ordinarily include frequency related effects and components and is therefore generally valid only at midband frequencies and below . However the h-parameter model is very useful since the h-parameters can be easily measured for a BJT. The value of hre is usually on the order of 10-4 and can be considered a short circuit. The value of hoe is usually on the order of 10-5 S making 1/hoe effectively an open circuit for most circuit configurations and biases. Making the same