Compact Device Modelling for System Simulation .pptVIP

Compact IGBT Modelling for System Simulation Philip Mawby Angus Bryant Background Compact modelling of IGBTs and diodes Warwick and Cambridge Universities, UK Collaboration with University of South Carolina, USA Developed for MATLAB/Simulink, PSpice Integrated device optimisation parameter extraction in MATLAB Proven for a wide range of devices conditions Includes full temperature dependency Compact Device Models Excess carrier density modelled Critical to on-state and switching behaviour Ambipolar diffusion equation ADE describes carrier density distribution Fourier series used to solve ADE Boundary conditions set by depletion layers, MOS channel, emitter recombination, etc. Implemented in Simulink Block-diagram form including circuit Chopper cell circuit inductive switching Model Details Excess carrier density stored charge is one-dimensional for 90% of CSR. Fourier series solves 1D carrier density p x,t in CSR: Fourier terms pk t solved by ordinary differential equations Boundary conditions: CSR edges x1,x2 and gradients dp/dx set by currents . Depletion layer voltage Vd2 provides feedback to keep p x2 0. Classic MOS model used to determine e- current In2. Model Capabilities Temperature-enabled Proven capability from –150°C to +150°C. IGBT structures: 2-D effects gate structure accounted for Buffer layer enabled: choice of NPT/PT including FS/SPT devices Local lifetime control enabled IGBT Model Outline Device Matching - 1 Full chopper cell Initial fit by hand Device Matching - 2 IGBT and diode parameter sets for compact models. Device Matching - 3 Inductive switching shown here. IGBT turn-on left , IGBT turn-off right . Device Matching - 4 Inductive switching shown here. IGBT turn-on left , IGBT turn-off right . Device Matching - 5 On-state forward voltage shown here. Turn-on Waveforms Given at different temperatures and load currents x-axis is time us Turn-off Waveforms Given at different temperatures and load currents x-axis is t