光电半导体专题研究成果发表.pptVIP

2003/6/6 光電半導體專題研究(91學年度) 光電半導體元件與高功率雷射系統之研究 陳秀芬 楊勝州 屠嫚琳 吳佩璇 謝尚衛 Outline Experimental and numerical investigation of 590-nm AlGaInP light emitting diodes and vertical-cavity surface-emitting lasers (陳秀芬) 紫光氮化銦鎵面射型半導體雷射之設計與分析 (楊勝州) Numerical study on the optical properties of a 655-nm vertical-cavity surface-emitting laser for PMMA-d8 optical fiber communication (屠嫚琳) Investigation of the characteristics of electronic overflow in 415-nm violet InGaN semiconductor laser (吳佩璇) Introduction of passive Q-switching theory and tunable Cr:YSO Q-switched Cr:LiSAF laser (謝尚衛) Experimental and numerical investigation of 590-nm AlGaInP light emitting diodes and vertical-cavity surface-emitting lasers 指導教授：郭艷光 博士 報告者：陳秀芬 班級:物理系四年乙班 Abstract We experimentally investigated the optical properties of several 590-nm AlGaInP light emitting diodes of different structures with a photoluminescence measurement system. The optical properties of the 590-nm AlGaInP multiple quantum well structures are also numerically investigated with the PICS3D simulation program. In the mean time, the optical characteristics of the 590-nm AlGaInP vertical-cavity surface-emitting lasers are numerically evaluated with the PICS3D simulation program. PL spectrum of 590-nm LEDs at room temperature The intensity of Sample A is much lower than that of Sample B. Both of their wavelength is about 590 nm. The efficiency of Sample C is worse, and its wavelength is about 605 nm. PL spectrum of Sample B at different temperatures It’s obvious that the central wavelength has “blue shift” when the temperature decreases. In the mean time, the intensity becomes higher, and FWHM (full width at half maximum) becomes smaller. Wavelength and intensity of Sample B as a function of temperature When temperature decreases, the central wavelength becomes shorter and the intensity becomes higher. Wavelength and intensity of Sample B as a function of input power If we increase the input power at room temperature, the central