掺杂ZnO薄膜的进展综述.docVIP

掺杂ZnO薄膜的研究进展 摘要：ZnO薄膜作为一种Ⅱ～Ⅵ族的宽禁带半导体材料，具有优异的物理化学性能。通过对薄膜的掺杂，可以改善其性能，使其应用更加广泛。综述了ZnO薄膜的制备方法，比较了各种制备方法的优缺点，重点探讨了掺杂对薄膜的结构、光、电性能的影响，最后总结了ZnO薄膜的应用和今后可能的研究方向。 关键词：掺杂ZnO薄膜，制备工艺，性能 Abstract：ZnO thin films are a kind of II～VI semiconductors with a wide direct band gap and excel—lent physical and chemical properties. Doped thin films can improve their functions and make their applications more extensive．In this paper，preparation technique of ZnO thin films was reviewed and their advantages and disadvantages were pointed out．And the structure, optical，electrical properties of doped ZnO thin films were st