场效应产品目录.docVIP

场 效 应 管 MOSFET（Metal Oxide SemiconductorField Effect Transistor） IRF150 150 40 100 GDS TO-204AE IRF250 150 30 200 GDS TO-204AE IRF450 150 13 500 GDS TO-3P IRF460 300 21 500 GDS TO-204AE IRF540 150 28 100 GDS TO-220AB IRF630 75 9 200 GDS TO-220AB IRF640 125 18 200 GDS TO-220AB IRF730 74 5.5 400 GDS TO-220AB IRF740 125 10 400 GDS TO-220AB IRF830 74 4.5 500 GDS TO-220AB IRF840 125 8 500 GDS TO-220AB IRF1404 200 162 40 GDS TO-220AB IRF1405 330 169 55 GDS TO-220AB IRF3205 200 80-110 55 GDS TO-220AB IRFP40 150 40 40 GDS TO-220AB IRFP450A 190 14 500 GDS TO-220AB IRF9640 125 -11 -200 GDS TO-220AB IRFZ44 190 50 60 GDS TO-220AB IRFZ48 45 40 55 GDS TO-220AB IRFP064 300 70 60 GDS TO-247AC IRFP150 200 40 100 GDS TO-3P IRFP250 190 30 200 GDS TO-247AC IRFP450 190 14 500 GDS TO-247AC IRFP460 280 20 500 GDS TO-247AC IRFPE40 150 5.5 800 GDS TO-247AC 2N60 64 2.4 600 GDS TO-220AB 3N60 75 3 600 GDS TO-220AB 3N90 25 3 900 GDS TO-220AB 4N60 106 4.4 600 GDS TO-220F 6N60 125 6 600 GDS TO-220AB 10N10 75 10 100 GDS TO-220AB 10N60 180 11 600 GDS TO-220AB 11N90 250 110 900 GDS TO-3P 40N50 500 40 500 GDS TO-247AC 50N06 125 50 60 GDS TO-220 60N06 150-250 60 60 GDS TO-220AB 60N100 176 60 1000 GDS TO-3PL 70N06 250 70 60 GDS T0220AB 75N75 300 75 75 GDS TO-3P 100N10 450 100 100 GDS TO-3P 开关晶体管 Switch transistor for energy-saving Iamp ballast 序号 产品型号 极性 Ic Pcm VEBO VCEO VCBO HFE 封装形式 NO. Part NO. PoIanity (A) (W) (V) (V) (V) Min Max Package 1 D13003 NPN 1.5 40 9 400 700 8 70 TO-220 2 D13004 NPN 4 75 9 400 600 8 70 TO-220 3 D13005 NPN 4 75 9 400 700 8 70 TO-220 4 D13006 NPN 8 80 9 400 600 8 70 TO-220 5 D13007 NPN 8 80 9 450 700 8 70 TO-220 6 D13008 NPN 12 100 9 300 600 8 70 TO-220 7 D13009 NPN 12 100 9 400 700 8 70 TO-220 功 放 对 管 Stereo set to tube 型号参数 极性 Ptot(W) lc(A) VCBO(V) VCEO(V) VEBO(V) VCES(msx) HFE ft(MHZ) 封装 (V) lc(mA) lB(mA) min/max VCE?(V) lc(mA) -20 -180 -180 -6 2 8 0.8 30/180 5 5 40 TO-3PL 2SC2922 NPN 200 20 180 1