表面吸附扩散与薄膜中的扩散.pptVIP

As with virtually all mass-transport-related reliability problems, damage is thermally activated. For pure Al conductors n is typically 2, and Ee, the activation energy for electromigration failure, ranges from 0.5 to 0.8 eV depending on grain size. In contrast, an energy of 1.4 eV is associated with lattice diffusion. Therefore, low-temperature electromigration damage in films is clearly dominated by GB transport. The constant K is dependent on film structure and processing. In order to improve the life of Al metallizations more electromigration-resistant alloys have been developed over the y