全球半导体晶体生长计算著名商业软件FEMAGCUSP磁场对8英寸半导体级硅晶体生长的影响分析学习课件.pptVIP

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全球半导体晶体生长计算著名商业软件FEMAGCUSP磁场对8英寸半导体级硅晶体生长的影响分析学习课件.ppt

全球半导体晶体生长计算著名的商业软件FEMAG 之 CUSP磁场对8英寸半导体级硅晶体生长的影响分析 Report Bruker ASC FEMAGSoft ? 2012 FEMAGSoft ? 2012 OBJECTIVE PROCESS CONDITION CZ furnace - 8 inch diameter crystal, 24 inch diameter crucible To predict the impact of a CUSP magnetic field operating at 140 A with the neutral-axis located on the melt free surface. SIMULATION PROCESS The growth process is modeled as Time dependent simulation taking in to account the transient effects taking place during the growth of the crystal PARAMETERS OBSERVED The concentration of the Oxygen in the melt and crystal. The concentration of the Phosp

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